Crystal size | ~10 mm |
Electrical properties | Semiconductor, n-type (p-type is also available) |
Crystal structure | hexagonal |
Unit cell parameters | a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120° |
Type | Synthetic |
Purity | >99.995 % |
Characterized by | XRD, Raman, EDX, Hall measurement |
More information? | Please contact us by email or phone |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.
Click on an image to zoom
X-ray diffraction on a 2H-MoS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal MoS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoS2. Measurement was performed with a 785 nm Raman system at room temperature.
1. Beom Seo Kim et al., "Determination of the band parameters of bulk 2H-MX2 (M = Mo, W; X = S, Se) by angle-resolved photoemission spectroscopy", Nature/Scientific Reports 6, Article number: 36389 (2016), link to article:
http://www.nature.com/articles/srep36389
2. Yan Chen et al., "Optoelectronic Properties of Few-layer MoS2 FET Gated by Ferroelectric Relaxor Polymer", ACS Appl. Mater. Interfaces, 2016, 8 (47), pp 32083-32088, link to article:
http://pubs.acs.org/doi/abs/10.1021/acsami.6b10206
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번호 | 카테고리 | 제목 | 작성자 | 작성일 | 조회 |
---|---|---|---|---|---|
8 | MoS2 견적 요청드립니다. | 김**** | 2024-02-15 | 1 | |
7 | 견적 문의드립니다 | 유니나노텍(주) | 2024-02-15 | 17 | |
6 | 견적 문의 드립니다. | 김**** | 2024-01-19 | 3 | |
5 | 견적 문의드립니다 | 유니나노텍(주) | 2024-01-19 | 29 | |
4 | 견적 문의드립니다 | 박**** | 2022-08-29 | 2 |